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Course Information


FIZ730 - Kristal Büyütme Teknikleri

Rapor Tarihi: 11.04.2026 00:53

Course Information
Course Title Code Language Type Semester L+U Hour Credits ECTS
Crystal Growth Techniques FIZ730 Turkish Compulsory 3 + 0 3.0 7.5
Prerequisite Courses
Course Level Graduate
Mode of delivery Lecturing
Course Coordinator Prof. Dr. Kadir GÖKŞEN
Instructor(s)
Goals To teach growth techniques and the principles of the bulk and thin-film crystals and the internal measurement techniques.
Course Content Development of crystal growth,Growth of liquid phase,Silicon and GaAs growth methods,Czochralski and Brigman techniques,Epitaxial growth, Ultra-high vacuum conditions and techniques,Kinetic Theory of Gases,Chemical vapor deposition/epitaxy (CVD),Epitaxy Metalorganik chemical vapor (MOCVD) techniques,Molecular beam Epitaxy (MBE),Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer
Lesson Plan (Weekly Topics)
Week Topics/Applications Method
1. Week Development of crystal growth.
1. Week Development of crystal growth.
2. Week Growth of liquid phase.
2. Week Growth of liquid phase.
3. Week Silicon and GaAs growth methods.
3. Week Silicon and GaAs growth methods.
4. Week Czochralski and Brigman techniques.
4. Week Czochralski and Brigman techniques.
5. Week Czochralski and Brigman techniques.
5. Week Czochralski and Brigman techniques.
6. Week Epitaxial growth.
6. Week Epitaxial growth.
7. Week Epitaxial growth, Ultra-high vacuum conditions and techniques.
7. Week Epitaxial growth, Ultra-high vacuum conditions and techniques.
8. Week MIDTERM EXAM
8. Week MIDTERM EXAM
9. Week Kinetic Theory of Gases.
9. Week Kinetic Theory of Gases.
10. Week Chemical vapor deposition/epitaxy (CVD).
10. Week Chemical vapor deposition/epitaxy (CVD).
11. Week Epitaxy Metalorganik chemical vapor (MOCVD) techniques.
11. Week Epitaxy Metalorganik chemical vapor (MOCVD) techniques.
12. Week Molecular beam Epitaxy (MBE).
12. Week Molecular beam Epitaxy (MBE).
13. Week Molecular beam Epitaxy (MBE).
13. Week Molecular beam Epitaxy (MBE).
14. Week Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer
14. Week Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer
*Midterm and final exam dates are not specified in the 14-week course operation plan. Midterm and final exam dates are held on the dates specified in the academic calendar with the decision of the University Senate.
Recommended Sources
Ders Kitabı veya Notu Ders Kitabı veya Ders Notu bulunmamaktadır.
Diğer Kaynaklar
  • • H.J.Scheel, T. Fukuda, Crsystal Growth Technology, Wiley, 2004. • G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley, Springer Handbook of Crystal Growth, Springer, 2009.
  • • H.J.Scheel, T. Fukuda, Crsystal Growth Technology, Wiley, 2004. • G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley, Springer Handbook of Crystal Growth, Springer, 2009.
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