| Course Title | Code | Language | Type | Semester | L+U Hour | Credits | ECTS |
|---|---|---|---|---|---|---|---|
| Elekt. Elekt. Bil. | MM315 | Turkish | Compulsory | 5. Semester | 3 + 0 | 3.0 | 4.0 |
| Prerequisite Courses | |
| Course Level | Undergraduate |
| Mode of delivery | Face to face |
| Course Coordinator | Doç. Dr. Harun BAYRAKDAR |
| Instructor(s) | Doç. Dr. Harun BAYRAKDAR (Güz) |
| Goals | Starting from the physical properties of semiconductors, introducing of the basic circuit elements, teaching of their working principle and making of analysis of various simple circuits. |
| Course Content | Semiconductors, doped semiconductors, pn junctions and their characteristics, Diodes and types of diodes, Half and full signal rectifiers, Diode applications: Structure of serial diode, Parallel and series structures, Diode applications: and/or doors, sinusoidal signals, Other diode applications, Structure and working principles of transistors, Bipolar junction transistors, BJTs under DC bias, Field effective transistor |
| # | Öğrenme Kazanımı |
| 0 | Distinguishing the basic physical and electrical properties of semiconductors. |
| 0 | Comprehending the structure and working principle of various diyotes and distinguish signals at various applications. |
| 0 | Distinguishing the structure of bipolar junctional transistors (BJTs, their working principles and make dc analysis. |
| 0 | Making small-signal analysis of BJTs. |
| 0 | Distinguishing the basic structure of functional amplifiers and their applications. |
| Week | Topics/Applications | Method |
|---|---|---|
| 1. Week | Semiconductors, doped semiconductors | |
| 2. Week | pn junctions and their characteristics | |
| 3. Week | Diodes and Types of Diodes, Half and Full Signal Rectifiers | |
| 4. Week | Diode applications: Structure of Serial Diode, Parallel and series structures | |
| 5. Week | Diode applications: And/or doors, Sinusoidal signals | |
| 6. Week | Other diode applications | |
| 7. Week | Structure and working principles of Transistors | |
| 8. Week | MIDTERM EXAM | |
| 9. Week | Bipolar Junction Transistors | |
| 10. Week | BJTs under DC bias | |
| 11. Week | BJTs under DC bias | |
| 12. Week | BJTs under DC bias | |
| 13. Week | Field Effective Transistor | |
| 14. Week | Field Effective Transistor |
| No | Program Requirements | Level of Contribution | |||||
|---|---|---|---|---|---|---|---|
| 1 | 2 | 3 | 4 | 5 | |||
| 1 | Engineering graduates with sufficient theoretical and practical background for a successful profession and with application skills of fundamental scientific knowledge in the engineering practice | ||||||
| Program Requirements | DK1 | DK2 | DK3 | DK4 | DK5 |
|---|---|---|---|---|---|
| PY1 | 25 | 25 | 25 | 25 | 25 |
| Ders Kitabı veya Notu | Ders Kitabı veya Ders Notu bulunmamaktadır. |
|---|---|
| Diğer Kaynaklar |
|
| ECTS credits and course workload | Quantity | Duration (Hour) | Total Workload (Hour) | |
|---|---|---|---|---|
|
Ders İçi |
Class Hours | 14 | 3 | 42 |
|
Ders Dışı |
Preparation, After Class Study | 14 | 1 | 14 |
| Research | 14 | 1 | 14 | |
| Other Activities | 14 | 1.35 | 18.9 | |
|
Sınavlar |
Midterm 1 | 1 | 2 | 2 |
| Homework 1 | 7 | 1 | 7 | |
| Quiz 1 | 4 | 0.5 | 2 | |
| Final | 1 | 2 | 2 | |
| Total Workload | 101.9 | |||
| *AKTS = (Total Workload) / 25,5 | ECTS Credit of the Course | 4.0 | ||
