Course Title | Code | Semester | L+U Hour | Credits | ECTS |
---|---|---|---|---|---|
Crystal Growth Techniques | FIZ730 | 3 + 0 | 3.0 | 7.5 |
Prerequisites | None |
Language of Instruction | Turkish |
Course Level | Graduate |
Course Type | |
Mode of delivery | Lecturing |
Course Coordinator |
Prof. Dr. Kadir GÖKŞEN |
Instructor(s) | |
Assistants | |
Goals | To teach growth techniques and the principles of the bulk and thin-film crystals and the internal measurement techniques. |
Course Content | Development of crystal growth,Growth of liquid phase,Silicon and GaAs growth methods,Czochralski and Brigman techniques,Epitaxial growth, Ultra-high vacuum conditions and techniques,Kinetic Theory of Gases,Chemical vapor deposition/epitaxy (CVD),Epitaxy Metalorganik chemical vapor (MOCVD) techniques,Molecular beam Epitaxy (MBE),Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer |
Learning Outcomes |
Week | Topics | Learning Methods |
---|---|---|
1. Week | Development of crystal growth. | |
1. Week | Development of crystal growth. | |
2. Week | Growth of liquid phase. | |
2. Week | Growth of liquid phase. | |
3. Week | Silicon and GaAs growth methods. | |
3. Week | Silicon and GaAs growth methods. | |
4. Week | Czochralski and Brigman techniques. | |
4. Week | Czochralski and Brigman techniques. | |
5. Week | Czochralski and Brigman techniques. | |
5. Week | Czochralski and Brigman techniques. | |
6. Week | Epitaxial growth. | |
6. Week | Epitaxial growth. | |
7. Week | Epitaxial growth, Ultra-high vacuum conditions and techniques. | |
7. Week | Epitaxial growth, Ultra-high vacuum conditions and techniques. | |
8. Week | MIDTERM EXAM | |
8. Week | MIDTERM EXAM | |
9. Week | Kinetic Theory of Gases. | |
9. Week | Kinetic Theory of Gases. | |
10. Week | Chemical vapor deposition/epitaxy (CVD). | |
10. Week | Chemical vapor deposition/epitaxy (CVD). | |
11. Week | Epitaxy Metalorganik chemical vapor (MOCVD) techniques. | |
11. Week | Epitaxy Metalorganik chemical vapor (MOCVD) techniques. | |
12. Week | Molecular beam Epitaxy (MBE). | |
12. Week | Molecular beam Epitaxy (MBE). | |
13. Week | Molecular beam Epitaxy (MBE). | |
13. Week | Molecular beam Epitaxy (MBE). | |
14. Week | Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer | |
14. Week | Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer |
• H.J.Scheel, T. Fukuda, Crsystal Growth Technology, Wiley, 2004. • G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley, Springer Handbook of Crystal Growth, Springer, 2009. |
• H.J.Scheel, T. Fukuda, Crsystal Growth Technology, Wiley, 2004. • G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley, Springer Handbook of Crystal Growth, Springer, 2009. |