| Course Title | Code | Semester | L+U Hour | Credits | ECTS |
|---|---|---|---|---|---|
| Electrical Characterization Methods | FIZ727 | 3 + 0 | 3.0 | 7.5 |
| Prerequisites | None |
| Language of Instruction | Turkish |
| Course Level | Graduate |
| Course Type | |
| Mode of delivery | Lecturing |
| Course Coordinator |
Prof. Dr. Oğuz KÖYSAL |
| Instructor(s) | |
| Assistants | |
| Goals | Making characterization of microelectronic devices diode containing solid and liquid semiconductors, transistor etc. by current-voltage and admittance method |
| Course Content | Classification of solids and energy-band theory,Crystal mesh,Intrinsict semiconductor crystals,Energy-band structure,Charge carrier densities at thermal equilibrium,Intrinsict and doped semiconductors,Schottky diodes, Metal-insulator-semiconductor (MIS/MOS/MPS) structures. Schottky diodes,Current-voltage characteristics,Admittance technique and characterization |
| Learning Outcomes |
| Week | Topics | Learning Methods |
|---|---|---|
| 1. Week | Classification of solids and energy-band theory. | |
| 2. Week | Classification of solids and energy-band theory. | |
| 3. Week | Crystal mesh. | |
| 4. Week | Intrinsict semiconductor crystals. | |
| 5. Week | Energy-band structure. | |
| 6. Week | Energy-band structure. | |
| 7. Week | Charge carrier densities at thermal equilibrium. | |
| 8. Week | MIDTERM EXAM | |
| 9. Week | Intrinsict and doped semiconductors. | |
| 10. Week | Schottky diodes, Metal-insulator-semiconductor (MIS/MOS/MPS) structures. | |
| 11. Week | Schottky diodes, Metal-insulator-semiconductor (MIS/MOS/MPS) structures. | |
| 12. Week | Current-voltage characteristics. | |
| 13. Week | Current-voltage characteristics. | |
| 14. Week | Admittance technique and characterization |
| • S.M. Sze, K.K. Ng., Physics of Semiconductor Devices, 3nd Edition, Wiley, 2007. |
