| Course Title | Code | Semester | L+U Hour | Credits | ECTS |
|---|---|---|---|---|---|
| - | FIZ 633 | 3 + 0 | 3.0 | 8.0 |
| Prerequisites | None |
| Language of Instruction | Turkish |
| Course Level | Graduate |
| Course Type | |
| Mode of delivery | Lecturing |
| Course Coordinator |
Prof. Dr. Kadir GÖKŞEN |
| Instructor(s) | |
| Assistants | |
| Goals | To teach growth techniques and the principles of the bulk and thin-film crystals and the internal measurement techniques. |
| Course Content | Development of crystal growth,Growth of liquid phase,Silicon and GaAs growth methods,Czochralski and Brigman techniques,Epitaxial growth, Ultra-high vacuum conditions and techniques,Kinetic Theory of Gases,Chemical vapor deposition/epitaxy (CVD),Epitaxy Metalorganik chemical vapor (MOCVD) techniques,Molecular beam Epitaxy (MBE),Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer |
| Learning Outcomes |
| Week | Topics | Learning Methods |
|---|---|---|
| 1. Week | Development of crystal growth. | |
| 2. Week | Growth of liquid phase. | |
| 3. Week | Silicon and GaAs growth methods. | |
| 4. Week | Czochralski and Brigman techniques. | |
| 5. Week | Czochralski and Brigman techniques. | |
| 6. Week | Epitaxial growth. | |
| 7. Week | Epitaxial growth, Ultra-high vacuum conditions and techniques. | |
| 8. Week | MIDTERM EXAM | |
| 9. Week | Kinetic Theory of Gases. | |
| 10. Week | Chemical vapor deposition/epitaxy (CVD). | |
| 11. Week | Epitaxy Metalorganik chemical vapor (MOCVD) techniques. | |
| 12. Week | Molecular beam Epitaxy (MBE). | |
| 13. Week | Molecular beam Epitaxy (MBE). | |
| 14. Week | Internal measurement techniques: RHEED, AES and the ellipsometer, the mass spectrometer |
| • H.J.Scheel, T. Fukuda, Crsystal Growth Technology, Wiley, 2004. • G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley, Springer Handbook of Crystal Growth, Springer, 2009. |
