| Course Title | Code | Semester | L+U Hour | Credits | ECTS |
|---|---|---|---|---|---|
| Elekt. Elekt. Bil. | MM315 | 5. Semester | 3 + 0 | 3.0 | 4.0 |
| Prerequisites | None |
| Language of Instruction | Turkish |
| Course Level | Undergraduate |
| Course Type | |
| Mode of delivery | Face to face |
| Course Coordinator |
Assoc. Prof. Dr. Harun BAYRAKDAR |
| Instructors | |
| Assistants | |
| Goals | Starting from the physical properties of semiconductors, introducing of the basic circuit elements, teaching of their working principle and making of analysis of various simple circuits. |
| Course Content | Semiconductors, doped semiconductors, pn junctions and their characteristics, Diodes and types of diodes, Half and full signal rectifiers, Diode applications: Structure of serial diode, Parallel and series structures, Diode applications: and/or doors, sinusoidal signals, Other diode applications, Structure and working principles of transistors, Bipolar junction transistors, BJTs under DC bias, Field effective transistor |
| Learning Outcomes |
- Distinguishing the basic physical and electrical properties of semiconductors. - Comprehending the structure and working principle of various diyotes and distinguish signals at various applications. - Distinguishing the structure of bipolar junctional transistors (BJTs, their working principles and make dc analysis. - Making small-signal analysis of BJTs. - Distinguishing the basic structure of functional amplifiers and their applications. |
| Week | Topics | Learning Methods |
|---|---|---|
| 1. Week | Semiconductors, doped semiconductors | |
| 2. Week | pn junctions and their characteristics | |
| 3. Week | Diodes and Types of Diodes, Half and Full Signal Rectifiers | |
| 4. Week | Diode applications: Structure of Serial Diode, Parallel and series structures | |
| 5. Week | Diode applications: And/or doors, Sinusoidal signals | |
| 6. Week | Other diode applications | |
| 7. Week | Structure and working principles of Transistors | |
| 8. Week | MIDTERM EXAM | |
| 9. Week | Bipolar Junction Transistors | |
| 10. Week | BJTs under DC bias | |
| 11. Week | BJTs under DC bias | |
| 12. Week | BJTs under DC bias | |
| 13. Week | Field Effective Transistor | |
| 14. Week | Field Effective Transistor |
| • Electronic Devices and Circuit Theory, Robert L. Boylestad, Louis Nashelsky, Palme Publication. |
| • Basic Electronics for Scientists, James J. Brophy (Translation: Mehmet Zengin), Bilim Publication. |
| Program Requirements | Contribution Level | DK1 | DK2 | DK3 | DK4 | DK5 | Measurement Method |
|---|---|---|---|---|---|---|---|
| PY1 | 25 | 25 | 25 | 25 | 25 | 25 | 40,60 |
| 0 | 1 | 2 | 3 | 4 | 5 | |
|---|---|---|---|---|---|---|
| Course's Level of contribution | None | Very Low | Low | Fair | High | Very High |
| Method of assessment/evaluation | Written exam | Oral Exams | Assignment/Project | Laboratory work | Presentation/Seminar |
| Event | Quantity | Duration (Hour) | Total Workload (Hour) |
|---|---|---|---|
| Course Hours | 14 | 3 | 42 |
| Preparation, After Class Study | 14 | 1 | 14 |
| Research | 14 | 1 | 14 |
| Other Activities | 14 | 1.35 | 18.9 |
| Midterm 1 | 1 | 2 | 2 |
| Homework 1 | 7 | 1 | 7 |
| Quiz 1 | 4 | 0.5 | 2 |
| Final | 1 | 2 | 2 |
| Total Workload | 101.9 | ||
| ECTS Credit of the Course | 4.0 | ||
